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EAMCET Engineering 2004 Solved Paper

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Question : 38

Total: 160

In n−p−n transistor, in CE configuration:
1. The emitter is heavily doped than the collector.
2. Emitter and collector can be interchanged.
3. The base region is very thin but is heavily doped.
4. The conventional current flows from base to emitter.

1 and 2 are correct
1 and 3 are correct
1 and 4 are correct
2 and 3 are correct

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