Pure Si at 500 K has equal number of electron (n_e) and hole (n_h) concentrations of 1.5\times10^16m^{-3},Doping by indium increases n_h to 4.5\times10^22m^{-3}.The doped semiconductor is of (2011 Mains)

Correct Answer is : p-type having electron concentration ne=5×109m−3

p-type having electron concentration n_e=5\times10^9m^{-3}

n-type with electron concentration n_e=5\times10^22m^{-3}