GATE Electronics and Communications (EC) 2011 Solved Paper
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Question Numbers: 58-59
The channel resistance of an N-channel JFET shown in the figure below is 600 Ω when the full channel thickness (tch) of 10 μm is available for conduction. The built-in voltage of the gate P+ N junction (Vbi) is – 1 V. When the gate to source voltage (VGS) is 0 V, the channel is depleted by 1 μm on each side due to the built-in voltage and hence the thickness available for conduction is only 8 μm.
The channel resistance of an N-channel JFET shown in the figure below is 600 Ω when the full channel thickness (tch) of 10 μm is available for conduction. The built-in voltage of the gate P+ N junction (Vbi) is – 1 V. When the gate to source voltage (VGS) is 0 V, the channel is depleted by 1 μm on each side due to the built-in voltage and hence the thickness available for conduction is only 8 μm.
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