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GATE Electrical Engineering (EE) 2020 Solved Paper
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© examsnet.com
Question : 58
Total: 65
Consider the diode circuit shown below. The diode,
D
, obeys the current-voltage characteristic
I
D
=
I
s
(
exp
(
V
D
n
V
T
)
−
1
)
, where
n
>
1
,
V
T
>
0
,
V
D
is the voltage across the diode and Io is the current through it. The circuit is biased so that voltage,
V
>
0
and current,
I
<
0
.
If you had to design this circuit to transfer maximum power from the current source
(
I
1
)
to a resistive load (not shown) at the output, what values of
R
1
and
R
2
would you choose ?
Small
R
1
and small
R
2
.
Small
R
1
and large
R
2
.
Large
R
1
and large
R
2
.
Large
R
1
and small
R
2
.
Validate
Solution:
For maximum power transfer,
R
1
should be as small as possible
4
R
2
should be as large or possible.
© examsnet.com
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