GATE Electronics and Communications (EC) 2012 Solved Paper
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Question Numbers: 60-61
In the three dimensional view of a silicon n-channel MOS transistor shown below, d = 20 nm. The transistor is of width 1 μm. The depletion width formed at every p-n junction is 10 nm. The relative permittivities of SiO2 and Si, respectively, are 3.9 and 11.7, and ε0 = 8.9 × 10-12 F/m.
In the three dimensional view of a silicon n-channel MOS transistor shown below, d = 20 nm. The transistor is of width 1 μm. The depletion width formed at every p-n junction is 10 nm. The relative permittivities of SiO2 and Si, respectively, are 3.9 and 11.7, and ε0 = 8.9 × 10-12 F/m.
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