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GATE Electronics and Communications (EC) 2015 Shift 1 Solved Paper

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Question : 45

Total: 65

For a silicon diode with long P and N regions, the acceptor and donor impurity concentrations are 1×1017cm3‌and‌1×1015cm3 respectively. The lifetimes of electrons in the P-region and holes in the N-region are both 100 μs. The electron and hole diffusion coefficients are 49cm3 and 36‌cm2∕s respectively. Assume ‌

=26‌mV, the intrinsic carrier concentration is 1×1010‌cm−3 , and q=1.6×10−19C. When a forward voltage of 208 mV is applied across the diode, the hole current density (in nA / cm²) injected from P region to N region is

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