Consider a silicon sample at T = 300 K, with a uniform donor density 𝑁_𝑑 = 5 × 10¹⁶
cm⁻³, illuminated uniformly such that the optical generation rate is 𝐺_𝑜𝑝𝑡= 1.5 × 10²⁰cm⁻³𝑠⁻¹ throughout the sample. The incident radiation is turned off at 𝑡 = 0. Assume low-level injection to be valid and ignore surface effects. The carrier lifetimes are 𝜏_𝑝₀= 0.1 μs and 𝜏_𝑛₀ = 0.5 μs.

The hole concentration at 𝑡 = 0 and the hole concentration at 𝑡 = 0.3 μs, respectively, are

Question

Examsnet · Accepted Answer

Correct Answer is : 1.5 × 1013 cm−3 and 7.47 × 1011 cm−3

GATE Electronics and Communications (EC) 2016 Shift 1 Solved Paper