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GATE Electronics and Communications (EC) 2017 Shift 1 Solved Paper
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Question : 47
Total: 65
As shown, a uniformly doped Silicon (Si) bar of length L = 0.1 μm with a donor concentration N
D
= 10
16
cm
–3
is illuminated at x = 0 such that electron and hole pairs are generated at the rate of G
L
=
G
L
0
(
1
−
x
L
)
,
0
≤
x
≤
L
, where G
L0
= 10
17
cm
–3
s
–1
.
Hole lifetime is 10
–4
s, electronic charge q = 1.6 × 10
–19
C, hole diffusion coefficient D
p
= 100 cm
2
/s and low level injection condition prevails.
Assuming a linearly decaying steady sate excess hole concentration that goes to 0 at x = L, the magnitude of the diffusion current density at x = L/2, in A/cm
2
, is ________.
Your Answer:
Validate
Solution:
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